Samsung and TSMC Join Intel in Adopting ASML’s High NA EUV Lithography Technology

Samsung and TSMC have officially committed to adopting ASML’s latest High NA extreme ultraviolet (EUV) lithography systems, joining Intel in embracing the advanced technology. Alongside this hardware rollout, the industry leaders unveiled a collaborative initiative to transition toward larger 12-inch photomasks, a move designed to enhance manufacturing yields and reduce overall chip production costs.

According to ASML, Samsung plans to integrate High NA EUV technology into its DRAM memory production by 2028, while TSMC is scheduled to deploy it for advanced nodes starting in 2030. These timelines follow Intel, which became the first company to utilize the technology for its 18A process, including select Core Ultra Series 3 processors codenamed Panther Lake. ASML recently reported that Intel has already produced over one million wafers using this new process.

Beyond lithography equipment, the three companies are partnering to shift from the current six-inch photomasks to 12-inch variants. These larger masks serve as stencils for etching chip patterns onto wafers. SK Hynix is also currently evaluating whether to join the consortium. The primary benefit of this transition is the elimination of “stitching”—a complex and costly process required when current masks are too small to print finer High NA EUV features on larger chips in a single exposure.

ASML indicated that testing for 12-inch photomask fabs will commence in 2031, with full production expected by 2033. Marco Pieters, ASML’s chief technology officer, highlighted the potential impact of this shift, telling Reuters that successful industry adoption could increase system productivity by up to 40 percent. However, experts note that ramping up such sophisticated technology presents significant challenges, and both Samsung and TSMC may encounter bottlenecks that could delay their respective production targets.